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Kaga FEI America

Kaga FEI America

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FeRAM

Ferroelectric RAM (FeRAM or FRAM) is a non-volatile, random-access memory featuring high read/write endurance, fast writing speed and ultra-low power operation. Fujitsu is one of the pioneers of this unique technology and has over 20 years of manufacturing experience.

Resistive RAM is also a non-volatile memory that relies on changes in resistance of the metal oxide thin film structure within each storage cell.  The level of resistance determines the value of “1” or “0” in each cell.  Main features of ReRAM memories are fast write times, low power consumption, and high endurance.  Target applications include wearables, medical and industrial applications.

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FeRAM Products

I2C Interface

Part NumberMemory DensityPower Supply VoltageOperating Freq. (max)Operating Temp.Read/Write CyclePackage
MB85RC1MT1Mbit1.8 to 3.6V3.4MHz-40 to +85℃1013 (10 trillion)SOP-8
MB85RC512T512Kbit1.8 to 3.6V3.4MHz-40 to +85℃1013 (10 trillion)SOP-8
MB85RC256V256Kbit2.7 to 5.5V1MHz-40 to +85℃1012 (1 trillion)SOP-8
MB85RC128A128Kbit2.7 to 3.6V1MHz-40 to +85℃1012 (1 trillion)SOP-8
MB85RC64TA64Kbit1.8 to 3.6V3.4MHz-40 to +85℃1013 (10 trillion)SOP-8
MB85RC64A64Kbit2.7 to 3.6V1MHz-40 to +85℃1012 (1 trillion)SOP-8
MB85RC64V64Kbit3.0 to 5.5V1MHz-40 to +85℃1012 (1 trillion)SOP-8
MB85RC1616Kbit2.7 to 3.6V1MHz-40 to +85℃1012 (1 trillion)SOP-8
MB85RC16V16Kbit3.0 to 5.5V1MHz-40 to +85℃1012 (1 trillion)SOP-8
MB85RC04V4Kbit3.0 to 5.5V1MHz-40 to +85℃1012 (1 trillion)SOP-8

SPI Interface (for High Reliability Use, AEC-Q100 Compliant)

Part NumberMemory DensityPower Supply VoltageOperating Freq. (max)Operating Temp.Read/Write CyclePackage
MB85RS256TY512Kbit1.8 to 3.6V40MHz-40 to +125℃1013 (10 trillion)SOP-8
MB85RS128TY128Kbit1.8 to 3.6V40MHz-40 to +125℃1013 (10 trillion)SOP-8
MB85RS64VY64Kbit2.7 to 5.5V33MHz-40 to +125℃1013 (10 trillion)SOP-8

SPI Interface (for General Use)

Part NumberMemory DensityPower Supply VoltageOperating Freq. (max)Operating Temp.Read/Write CyclePackage
MB85RS4MT4Mbit1.8 to 3.6V40MHz-40 to +85℃1013 (10 trillion)SOP-8
MB85RQ4ML4Mbit1.7 to 1.95V108MHz-40 to +85℃1013 (10 trillion)SOP-16
MB85RS2MTA2Mbit1.8 to 3.6V33MHz(*2)-40 to +85℃1013 (10 trillion)SOP-8, DIP-8
MB85RS2MT2Mbit1.8 to 3.6V25MHz(*1)-40 to +85℃1013 (10 trillion)SOP-8, DIP-8
MB85RS1MT1Mbit1.8 to 3.6V30MHz(*1)-40 to +85℃1013 (10 trillion)SOP-8, WL-CSP
MB85RS512T512Kbit1.8 to 3.6V30MHz(*1)-40 to +85℃1013 (10 trillion)SOP-8
MB85RS256TY256Kbit1.8 to 3.6V33MHz-40 to +125℃1013 (10 trillion)SOP-8
MB85RS256B256Kbit2.7 to 3.6V33MHz-40 to +85℃1012 (1 trillion)SOP-8
MB85RS128TY128Kbit1.8 to 3.6V33MHz-40 to +125℃1013 (10 trillion)SOP-8
MB85RS128B128Kbit2.7 to 3.6V33MHz-40 to +85℃1012 (1 trillion)SOP-8
MB85RS64VY64Kbit2.7 to 5.5V33MHz-40 to +125℃1013 (10 trillion)SOP-8, SON-8
MB85RS64TU64Kbit1.8 to 3.6V10MHz-55 to +85℃1013 (10 trillion)SOP-8, SON-8
MB85RS64T64Kbit1.8 to 3.6V10MHz-40 to +85℃1012 (1 trillion)SOP-8, SON-8
MB85RS64V64Kbit3.0 to 5.5V20MHz-40 to +85℃1012 (1 trillion)SOP-8
MB85RS6464Kbit2.7 to 3.6V20MHz-40 to +85℃1012 (1 trillion)SOP-8
MB85RS1616Kbit2.7 to 3.6V20MHz-40 to +85℃1012 (1 trillion)SOP-8
MB85RS16N16Kbit2.7 to 3.6V20MHz-40 to +95℃1012 (1 trillion) at 85℃ or 1010 (10 billion) at 95℃SOP-8, SON-8
MB85RDP16LX (*2)16Kbit1.65 to 1.95V15MHz(*3)-40 to +105℃1013 (10 trillion)SON-8

Notes:

*1: Maximum 40MHz operation is available at fast read mode.
*2: With binary counter function.
*3: Maximum 7.5MHz operation is available at Dual SPI mode.

Parallel Memory

Part NumberMemory DensityPower Supply VoltageCycle TimeOperating Temp.Read/Write CyclePackage
MB85R8M2T8Mbit (512K×16)1.8 to 3.6V150ns-40 to +85℃1013 (10 trillion)FBGA-48
MB85R4M2T4Mbit (256K×16)1.8 to 3.6V150ns-40 to +85℃1013 (10 trillion)TSOP-44
MB85R4001A4Mbit (512K×8)3.0 to 3.6V150ns-40 to +85℃1010 (10 billion)TSOP-48
MB85R4002A4Mbit (256K×16)3.0 to 3.6V150ns-40 to +85℃1010 (10 billion)TSOP-48
MB85R1001A1Mbit (128K×8)3.0 to 3.6V150ns-40 to +85℃1010 (10 billion)TSOP-48
MB85R1002A1Mbit (64K×16)3.0 to 3.6V150ns-40 to +85℃1010 (10 billion)TSOP-48
MB85R256F256K (32Kx8)2.7 to 3.6V150ns-40 to +85℃1012 (1 trillion)TSOP-28, SOP-28

FeRAM-embedded RFID LSI

Part NumberOperating Freq.Memory DensityCommandsSerial InterfaceRead/Write Cycle
MB97R8110UHF 860-960MHz8KByteISO/IEC18000-63, EPC C1G2 Ver.1.2.0SPI(*)(Master/Slave)1012 (1 trillion)
MB97R8120UHF 860-960MHz8KByteISO/IEC18000-63, EPC C1G2 Ver.1.2.0–1012 (1 trillion)
MB97R8130UHF 860-960MHz8KByteISO/IEC18000-63, EPC C1G2 Ver.1.2.0SPI(*)(Slave)1012 (1 trillion)
MB97R8050UHF 860-960MHz36Byte (EPC128bit)ISO/IEC18000-63, EPC C1G2 Ver.1.2.0–1010 (10 billion)
MB89R118CHF 13.56MHz2KByteISO/IEC15693–1012 (1 trillion)
MB89R119BHF 13.56MHz256ByteISO/IEC15693–1012 (1 trillion)
MB89R112AHF 13.56MHz8KByteISO/IEC15693–1012 (1 trillion)

Note:
(*) For Batteryless Wireless Applications

FeRAM-embedded Authentication LSI

Part NumberPower Supply VoltageInterfaceCommunication Freq.Operating Temp.Read/Write CyclePackage
MB94R3303.0 to 3.6VI2C400KHz-20 to +85℃1012 (1 trillion)SON-8

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