Resistive RAM is a type of non-volatile memory that relies on changes in resistance of the metal oxide thin film structure within each storage cell. The level of resistance determines the value of “1” or “0” in each cell. Main features of ReRAM memories are fast write times, low power consumption, and high endurance. Target applications include wearables, medical and industrial applications.
|Part Nunber||Memory Density||Power Supply Voltage||Operating Freq.||Operating Temp.||Read Current||Read Cycle||Package|
|MB85AS8MT||8Mbit||1.6 to 3.6V||10Mhz||-40 to +85℃||0.15mA||Unlimited||SOP-8, WLCSP-11|
|MB85AS4MT||4Mbit||1.65 to 3.6V||5Mhz||-40 to +85℃||0.2mA||Unlimited||SOP-8|